DocumentCode
2839480
Title
InAsxP1-x V-groove quantum wires
Author
Kappelt, M. ; Turck, V. ; Bimberg, D.
Author_Institution
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
fYear
1998
fDate
11-15 May 1998
Firstpage
587
Lastpage
590
Abstract
For the first time we used the phosphorus/arsenic exchange reaction in InP V-grooves under arsine atmosphere to fabricate in-situ InAsxP1-x quantum wires by metal organic chemical vapor deposition (MOCVD) with emission at 1.163 eV. The advantage of this method is that no planarization of the groove tip occurs since no material is deposited during the exchange process. Details of As/P exchange on (001), (111)A, and (111)B surfaces and in the groove tip will be presented. Photoluminescence and spatially resolved cathodoluminescence are used to reveal the properties of the structures
Keywords
III-V semiconductors; MOCVD coatings; cathodoluminescence; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wires; 1.163 eV; In(AsP); InAsxP1-x V-groove quantum wires; MOCVD; P-As exchange reaction; arsine atmosphere; metal organic chemical vapor deposition; photoluminescence; planarization; spatially resolved cathodoluminescence; Buffer layers; Indium compounds; Indium gallium arsenide; Indium phosphide; MOCVD; Quantum dots; Semiconductor materials; Spatial resolution; Substrates; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location
Tsukuba
ISSN
1092-8669
Print_ISBN
0-7803-4220-8
Type
conf
DOI
10.1109/ICIPRM.1998.712690
Filename
712690
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