Title :
Growth of TlInGaAs on InP by gas source MBE
Author :
Takenaka, K. ; Asahi, H. ; Koh, H. ; Asami, K. ; Gonda, S. ; Oe, K.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
TlInGaAs quaternary layers are, for the first time, grown on InP substrates by gas source MBE. This new semiconductor material system was recently proposed by us for long wavelength optical devices as well as temperature insensitive wavelength laser diodes. During the growth, RHEED pattern shows (2×2) reconstructions. X-ray diffraction measurement shows the successful growth of TIInGaAs. PL emission is observed and their temperature variation of PL peak energy is observed to be small
Keywords :
III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; gallium arsenide; indium compounds; photoluminescence; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; surface reconstruction; thallium compounds; (2×2) reconstructions; InP; RHEED pattern; TlInGaAs; TlInGaAs on InP; X-ray diffraction; gas source MBE; long wavelength optical devices; temperature insensitive wavelength laser diodes; Diode lasers; Indium phosphide; Optical devices; Optical surface waves; Pollution measurement; Semiconductor materials; Substrates; Surface contamination; Temperature; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712693
