Integrated resistor material with zero temperature coefficient of resistance and high stability

Author

Wu, Fan ; Morris, James E.

Author_Institution

Microelectron. Center, Medtronic Inc., Tempe, AZ, USA

fYear

2004

fDate

2004

Firstpage

84

Lastpage

88

Abstract

The dependence of the resistivity of on-chip SiO_xCr_1-x thin film resistors on process parameters were studied in this paper. The study presented here focuses on the dependence of the resistivity on different substrates. Atomic force microscopy, electrical force microscopy, and Transmission Electron Microscopy have been used in studying the morphology of the substrates and the resistor films deposited on them by magnetron sputtering. A relationship between the film resistivity and the substrate stress was observed. A qualitative model is presented to explain the electrical characteristics of the films.

Keywords

atomic force microscopy; cermets; electrical resistivity; silicon compounds; sputter deposition; surface morphology; thermal stability; thin film resistors; transmission electron microscopy; SiOCr; atomic force microscopy; cermet; electrical force microscopy; electrical resistivity; high stability; integrated resistor material; magnetron sputtered films; on-chip thin film resistors; process parameters; substrate stress; transmission electron microscopy; zero temperature coefficient of resistance; Atomic force microscopy; Chromium; Conductivity; Magnetic force microscopy; Resistors; Stability; Substrates; Temperature; Transistors; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Packaging Materials: Processes, Properties and Interfaces, 2004. Proceedings. 9th International Symposium on

Print_ISBN

0-7803-8436-9

Type

conf

DOI

10.1109/ISAPM.2004.1287994

Filename

1287994