Title :
Strain compensated In1-xGaxAs (x<0.47) quantum well photodiodes for extended wavelength operation
Author :
Dries, J. Christopher ; Gokhale, Milind R. ; Thomson, K.John ; Olsen, Gregory H. ; Forrest, Stephen R.
Author_Institution :
Center for Photonics & Optoelectron. Mater., Princeton Univ., NJ, USA
Abstract :
The use of highly strained (-1.8%) InGaAs quantum wells for the detection of optical radiation beyond the InP lattice-matched bandgap of 1.65 μm wavelength is reported. Excellent crystal quality for up to 50 quantum wells is maintained through strain compensation using tensile InGaP. Transmission electron microscopy and double crystal X-ray diffraction reveal smooth interfaces and no observable defects for In 0.83Ga0.17As layers with widths less than 80 Å. Single-pass quantum efficiencies of 33% have been achieved at 1.95 μm wavelength using a 50 period, strain compensated p-i-n multiple-quantum well structure in a top illuminated mesa device
Keywords :
III-V semiconductors; X-ray diffraction; gallium arsenide; indium compounds; interface structure; internal stresses; p-i-n photodiodes; photodetectors; semiconductor quantum wells; transmission electron microscopy; 1.95 mum; 33 percent; 80 A; In0.83Ga0.17As; In1-xGaxAs; InGaAs; InGaP; TEM; XRD; crystal quality; double crystal X-ray diffraction; extended wavelength operation; layer width; optical radiation detection; p-i-n MQW structure; single-pass quantum efficiency; smooth interfaces; strain compensated QW photodiodes; tensile InGaP; top illuminated mesa device; transmission electron microscopy; Capacitive sensors; Electron optics; Indium gallium arsenide; Indium phosphide; Optical detectors; Photonic band gap; Radiation detectors; Tensile strain; Transmission electron microscopy; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712697
