Title :
TiN metal gate thickness influence on fully depleted SOI MOSFETs physical and electrical properties
Author :
Widiez, J. ; Vinet, M. ; Poiroux, T. ; Holliger, P. ; Previtali, B. ; Grosgeorges, P. ; Mouis, M. ; Deleonibus, S.
Author_Institution :
CFA/DRT-LETI, Grenoble, France
Abstract :
In this paper, we report the influence of the TiN metal gate thickness on fully depleted (FD) silicon-on-insulator (SOI) MOS transistors with SiO2 and HfO2 gate dielectrics. The threshold voltage as well as the electrical oxide thickness (EOT), the gate leakage current and the channel mobility are impacted. Smaller the TiN layer is, better are the transistors characteristics. This is due to a lower charge effect when the TiN thickness decreases.
Keywords :
MOSFET; carrier mobility; dielectric materials; hafnium compounds; leakage currents; silicon compounds; silicon-on-insulator; titanium compounds; HfO2; SOI MOSFET; SiO2; TiN; channel mobility; charge effect; electrical oxide thickness; electrical properties; gate leakage current; physical properties; silicon-on-insulator; Degradation; Dielectric thin films; Dry etching; Gate leakage; Hafnium oxide; Leakage current; MOSFETs; Silicon on insulator technology; Threshold voltage; Tin;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563523
