Title :
Study of chemical reactions at metal-InP interfaces formed by sputter deposition of Pt and Ti
Author :
Takeyama, Mayumi B. ; Noya, Atsushi ; Hashizume, Takumi ; Hasegawa, Hideki
Author_Institution :
Dept. of Electr. & Electron. Eng., Kitami Inst. of Technol., Japan
Abstract :
Interfacial reactions between (100) InP and thin films of Pt and Ti were studied. For the Pt/InP interface, an amorphous intermixing layer was formed during the sputter-deposition process even at room temperature. At the as-deposited Ti/InP contact, outdiffusion of In and a strong reaction between Ti and P were observed. Such a reaction process was further enhanced by rapid thermal annealing (RTA), resulting in the formation of an In/Ti-P/InP interfacial configuration
Keywords :
Auger electron spectra; III-V semiconductors; X-ray diffraction; X-ray photoelectron spectra; amorphous state; chemical interdiffusion; indium compounds; platinum; rapid thermal annealing; semiconductor-metal boundaries; sputter deposition; surface chemistry; titanium; 300 K; In/Ti-P/InP interfacial configuration; InP; Pt; Pt sputter deposition; Pt/InP interface; RTA; Ti; Ti sputter deposition; Ti/InP contact; amorphous intermixing layer; chemical reactions; interfacial reactions; metal-InP interfaces; outdiffusion; rapid thermal annealing; room temperature; Chemical technology; Contacts; Etching; Indium phosphide; Rapid thermal annealing; Spectroscopy; Sputtering; Temperature; Thermal stability; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712701
