Title :
Floating body effects on the RF performance of FDSOI RF amplifiers
Author :
Chen, C.L. ; Chang, R.T. ; Wyatt, P.W. ; Chen, C.K. ; Yost, D.-R. ; Knech, J.M. ; Keast, C.L.
Author_Institution :
Massachusetts Inst. of Technol., Lexington, MA, USA
Abstract :
The impact of body contacts on the floating body effect of fully depleted (FD) SOI at high frequencies is studied. It is found that the floating body effect is negligibly small for FDSOI FETs and the body contact (BC) increased parasitic capacitance and degraded the performance. We show that the linearity of an X-band amplifier, fabricated with a 180-nm FDSOI technology, is unchanged by the BC in continuous wave and pulse mode operations.
Keywords :
field effect transistors; microwave amplifiers; nanoelectronics; silicon-on-insulator; 180 nm; FDSOI amplifiers; FDSOI field effect transistor; RF amplifiers; X-band amplifier; body contact; continuous wave operation; floating body effects; parasitic capacitance; pulse mode operation; Degradation; FETs; Immune system; Linearity; MOSFET circuits; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Scattering parameters; Voltage;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563528
