A comparison of 10 GHz frequency dividers in bulk and SOI 0.13 μm CMOS technologies

Author

Engelstein, Alexandre ; Fournier, Jean-Michel ; Knopik, Vincent ; Raynaud, Christine

Author_Institution

Inst. de Microelectronique, Electromagnetisme et Photonique, Grenoble, France

fYear

2005

fDate

3-6 Oct. 2005

Firstpage

47

Lastpage

49

Abstract

The goal of this paper is to focus on the advantages of SOI technologies for high speed digital circuits for RF application, through the study of the consumption of 10 GHz frequency dividers. Dynamic and static structures are implemented in bulk and SOI CMOS 0.13 μm technologies, and the measured consumptions are compared. As the capacitance of the drain-source diffusions and interconnections are reduced in SOI because of the BOX, dynamic consumption reductions of 20 % and 25 % are measured between bulk and SOI technologies, respectively for the dynamic and static structure.

Keywords

CMOS digital integrated circuits; frequency dividers; high-speed integrated circuits; microwave frequency convertors; silicon-on-insulator; 0.13 micron; 10 GHz; RF circuits; SOI CMOS technologies; bulk CMOS technologies; drain-source diffusions; dynamic structure; frequency dividers; high speed digital circuits; static structure; CMOS digital integrated circuits; CMOS technology; Capacitance measurement; Digital circuits; Frequency conversion; Latches; Low voltage; MOS devices; Photonics; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2005. Proceedings. 2005 IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-9212-4

Type

conf

DOI

10.1109/SOI.2005.1563529

Filename

1563529