DocumentCode :
2839766
Title :
Novel nanofabrication process for InAs/AlGaSb heterostructures utilizing AFM oxidation
Author :
Sasa, S. ; Ikeda, T. ; Akahori, M. ; Kajiuchi, A. ; Inoue, M.
Author_Institution :
Dept. of Electr. Eng., Osaka Inst. of Technol., Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
639
Lastpage :
642
Abstract :
We demonstrate a novel nanofabrication process for InAs which is shown to be readily applicable to the fabrication of InAs based nanostructure devices, such as quantum dot or wire structures. The fabrication process is achieved by direct local oxidation using atomic force microscope (AFM). The first type of process utilizes AFM oxidation of GaSb and AlGaSb layers which form the surface layer of our InAs/AlGaSb heterostructures. The oxidized GaSb regions are selectively removed by water immersion resulting in structural modification of the surface layer that causes spatial modification of two-dimensional electron gas concentration formed in the InAs channel layer. Magnetotransport measurements revealed the successful formation of a laterally modified two-dimensional electron gas. The second type of process is based on direct oxidation of InAs layer. We found that the oxidized InAs becomes insoluble to the acetic acid based etchant enabling a selective formation of InAs islands with any shape that are drawn by AFM oxidation. We compare these AFM oxidation process and describe their feasibility as a nanoscale fabrication process
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; etching; gallium compounds; indium compounds; island structure; nanotechnology; oxidation; semiconductor heterojunctions; semiconductor quantum dots; semiconductor quantum wires; two-dimensional electron gas; AFM oxidation; AlGaSb; GaSb; InAs based nanostructure devices; InAs channel layer; InAs islands; InAs-AlGaSb; InAs/AlGaSb heterostructures; acetic acid based etchant; atomic force microscope; direct local oxidation; direct oxidation; laterally modified two-dimensional electron gas; magnetotransport measurements; nanofabrication process; quantum dot structures; quantum wire structures; structural modification; two-dimensional electron gas concentration; water immersion; Atomic force microscopy; Atomic layer deposition; Electrons; Etching; Fabrication; Nanofabrication; Nanoscale devices; Oxidation; Quantum dots; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712704
Filename :
712704
Link To Document :
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