Title :
Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells
Author :
Samsudin, K. ; Cheng, B. ; Brown, A.R. ; Roy, S. ; Asenov, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter fluctuation information into the compact model has been developed. The impact of discrete random dopants in the source and drain regions on 6T SRAM cells has been investigated for well scaled ultra thin body (UTB) SOI MOSFETs with physical channel length in the range of 10nm to 5nm.
Keywords :
CMOS memory circuits; MOSFET; SRAM chips; circuit simulation; semiconductor device models; silicon-on-insulator; 10 to 5 nm; 6T SRAM cells; CMOS scaling; intrinsic parameter fluctuation; random dopant induced fluctuations; statistical circuit simulation framework; ultra thin body SOI MOSFET; Circuit simulation; Doping; Fluctuations; Libraries; MOSFETs; Nanoscale devices; Random access memory; Semiconductor device modeling; Semiconductor process modeling; Stability;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563533
