Title :
Broadband noise model for InP/InGaAs HBTs
Author :
Huber, A. ; Bergamasch, C. ; Morf, T. ; Jackel, H.
Author_Institution :
Electron. Lab., Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
A complete low-frequency (0.2 Hz to 500 kHz) and high-frequency (2 to 26 GHz) noise characterization as a function of emitter-geometry, temperature and bias-point of InP/InGaAs HBTs was carried out. The measured noise characteristics are validated by an equivalent circuit model with associated noise sources at different device temperatures, demonstrating an excellent agreement with the measurements
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor device noise; 0.2 Hz to 500 kHz; 2 to 26 GHz; InP-InGaAs; InP/InGaAs HBTs; bias-point; broadband noise model; emitter-geometry; equivalent circuit model; high-frequency; low-frequency; measured noise characteristics; noise characterization; Circuit noise; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low-frequency noise; Noise figure; Noise generators; Noise measurement; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712706
