DocumentCode :
2839807
Title :
Wideband characterization of body-accessed PD SOI MOSFETs with multiport measurements
Author :
Lederer, D. ; Rozeau, O. ; Raskin, J.P.
Author_Institution :
Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
fYear :
2005
fDate :
3-6 Oct. 2005
Firstpage :
65
Lastpage :
66
Abstract :
In this work we present an original method based on 3-port RF measurements to accurately extract the body resistance (Rbe) in body-accessed PD SOI MOSFETs. This method can be used to assess the validity of compact models such as BSIMSOI. The RF body access also enabled a precise characterization of intrinsic and extrinsic body capacitances. A complete 3-port model was then derived and further validated on DT MOSFET measurements by connecting the body to the gate terminal.
Keywords :
MOSFET; electric resistance measurement; semiconductor device measurement; semiconductor device models; silicon-on-insulator; 3-port RF measurements; BSIMSOI; DT MOSFET measurements; body capacitances; body resistance; partially depleted SOI MOSFET; Fingers; Immune system; Laboratories; MOSFETs; Microwave devices; Parasitic capacitance; Radio frequency; Threshold voltage; Transconductance; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-9212-4
Type :
conf
DOI :
10.1109/SOI.2005.1563535
Filename :
1563535
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2839807
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