DocumentCode
2839893
Title
Circuit to measure high speed pulse I-V characteristics with only DC I/O´s
Author
Ketchen, Mark B. ; Bhushan, Manjul ; Jenkins, Keith A.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
77
Lastpage
78
Abstract
We have implemented a new approach for measuring the pulse I-V characteristics of a set of nominally identical MOSFETs. In this scheme, all high speed signals are contained entirely inside the test structure itself. Only DC inputs and outputs are required for direct measurement of both DC and AC I-V characteristics at frequencies up to the GHz range.
Keywords
MOSFET; pulse circuits; semiconductor device measurement; DC inputs; DC outputs; I-V characteristics; MOSFET; current-voltage characteristics; high speed signals; Circuit testing; Current measurement; Intrusion detection; Inverters; Pulse circuits; Pulse measurements; Pulsed power supplies; Ring oscillators; Variable structure systems; Velocity measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563540
Filename
1563540
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