DocumentCode :
2839893
Title :
Circuit to measure high speed pulse I-V characteristics with only DC I/O´s
Author :
Ketchen, Mark B. ; Bhushan, Manjul ; Jenkins, Keith A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2005
fDate :
3-6 Oct. 2005
Firstpage :
77
Lastpage :
78
Abstract :
We have implemented a new approach for measuring the pulse I-V characteristics of a set of nominally identical MOSFETs. In this scheme, all high speed signals are contained entirely inside the test structure itself. Only DC inputs and outputs are required for direct measurement of both DC and AC I-V characteristics at frequencies up to the GHz range.
Keywords :
MOSFET; pulse circuits; semiconductor device measurement; DC inputs; DC outputs; I-V characteristics; MOSFET; current-voltage characteristics; high speed signals; Circuit testing; Current measurement; Intrusion detection; Inverters; Pulse circuits; Pulse measurements; Pulsed power supplies; Ring oscillators; Variable structure systems; Velocity measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-9212-4
Type :
conf
DOI :
10.1109/SOI.2005.1563540
Filename :
1563540
Link To Document :
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