Title :
Ultra-low-power, high-performance, dynamic-threshold digital circuits in the FlexFET independently-double-gated SOI CMOS technology
Author :
Hackler, D. ; DeGregorio, K. ; Parke, S.
Author_Institution :
American Semicond. Inc., Boise, ID, USA
Abstract :
This paper demonstrates IDG FlexFET CMOS in static CMOS ring oscillators, while the advantages of applying IDG-CMOS to dynamic domino CMOS logic circuits have recently been shown as well (H. Mahmoodi, 2004). IDG-CMOS has also recently been applied to several exciting new analog/MS/RF circuit applications, such as a single transistor mixer (L. Mathew, 2004).
Keywords :
CMOS logic circuits; field effect transistors; logic design; low-power electronics; oscillators; silicon-on-insulator; CMOS logic circuits; CMOS ring oscillators; IDG FlexFET CMOS; SOI CMOS technology; dynamic-threshold digital circuits; independently-double-gated CMOS; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Digital circuits; Etching; Inverters; MOSFETs; Radio frequency; Ring oscillators; Tin;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563542
