DocumentCode
2839992
Title
Relaxation of strained-SOI substrates by RTA process
Author
Yamasaki, Kosuke ; Kosemura, Daisuke ; Tanaka, Satoshi ; Ogura, Atsushi ; Chiba, Ichiro ; Shimidzu, Ryosuke
Author_Institution
Sch. of Sci. & Eng., Meiji Univ., Kanagawa, Japan
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
90
Lastpage
91
Abstract
Three different type strained-Si substrates, EPI, SGOI and SSOI, were evaluated by newly developed high-resolution UV-Raman spectroscopy. The structure relaxation occurred by RTA at 1050°C. The Raman peak shifted toward larger wavenumber after RTA for SSOI, indicating strain relaxation. The peak shifted toward lower wavenumber in the case of EPI due to the Ge diffusion rather than strain relaxation. The SGOI showed complex characteristics of SSOI and EPI.
Keywords
Raman spectroscopy; rapid thermal annealing; relaxation; silicon-on-insulator; ultraviolet spectroscopy; 1050 C; EPI; RTA process; SGOI; SSOI; Si; UV-Raman spectroscopy; high-resolution spectroscopy; rapid thermal annealing; strain relaxation; strained-SOI substrates; structure relaxation; Capacitive sensors; Fabrication; Germanium silicon alloys; Insulation; Optical scattering; Raman scattering; Rayleigh scattering; Silicon germanium; Spectroscopy; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563546
Filename
1563546
Link To Document