• DocumentCode
    2840067
  • Title

    Vth control of tpd-degradation-free FD SOI MOSFET with extremely thin BOX using variable body-factor scheme

  • Author

    Ohtou, Tetsu ; Yokoyama, Kouki ; Nagumo, Toshiharu ; Hiramoto, Toshiro

  • Author_Institution
    Inst. of Ind. Sci., Tokyo Univ., Japan
  • fYear
    2005
  • fDate
    3-6 Oct. 2005
  • Firstpage
    101
  • Lastpage
    103
  • Abstract
    A new bias scheme of variable-γ FD SOI MOSFET is proposed. Using the scheme, almost no degradation of tpd in the active-state is achieved even in the tBOX of a sub-10 nm while Ioff is sufficiently suppressed in the standby-state. Reducing the inter-die Vth fluctuation on a wide Vsub range in the active-state is realized. This device scheme is also well applicable to 3D channel MOSFETs including a FinFET.
  • Keywords
    MOSFET; buried layers; silicon-on-insulator; 3D channel MOSFET; FinFET; fully depleted SOI MOSFET; silicon-on-insulator; thin buried oxide; threshold voltage control; variable body-factor scheme; Character generation; Degradation; Delay; FinFETs; Impurities; Inverters; MOSFET circuits; Parasitic capacitance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2005. Proceedings. 2005 IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-9212-4
  • Type

    conf

  • DOI
    10.1109/SOI.2005.1563551
  • Filename
    1563551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2840067