DocumentCode
2840073
Title
1998 GaAs Reliability Workshop. Proceedings (Cat. No.98EX219)
fYear
1998
fDate
1-1 Nov. 1998
Abstract
The following topics were dealt with: qualification methodologies; reliability testing and failure mechanisms; measurement techniques and device simulation; hydrogen and other outgassing effects
Keywords
III-V semiconductors; gallium arsenide; semiconductor device reliability; GaAs; GaAs reliability; device simulation; failure mechanisms; hydrogen outgassing; measurement techniques; qualification methodologies; reliability testing;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs Reliability Workshop, 1998. Proceedings
Conference_Location
Atlanta, GA, USA
Print_ISBN
0-7908-0065-9
Type
conf
DOI
10.1109/GAASRW.1998.768027
Filename
768027
Link To Document