Title :
Updating the Navy´s parts derating requirements and application manual to include GaAs-based components
Author :
Stuffle, Brian ; Harris, Mike
Author_Institution :
Naval Surface Warfare Center, Crane, IN, USA
Abstract :
The Microelectronics Component Engineering Branch at Crane Division, Naval Surface Warfare Center (NSWC/CD) is in the process of updating the Navy´s Parts Derating Requirements and Application Manual for Navy Electronic Equipment (TE000-AB-GTP-O10). The military parts community has migrated from a Qualified Parts Listing (QPL) philosophy to a Qualified Manufacturers Listing (QML) and has also implemented the use of performance specifications. GaAs-based components are now being used in Navy electronic equipment and need to be included in TE000-AB-GTP-010. NSWC/CD´s goal is to make this document as accurate as possible by seeking guidance from the GaAs-based component supplier community. This paper describes the work that is being performed in the area of GaAs-based components. The derating of a number of GaAs technologies are being addressed in the updated manual. The manual addresses failure mechanisms and derating parameters for three environmental categories, which are based upon MIL-HDBK-179 (Microcircuit Acquisition Handbook)
Keywords :
III-V semiconductors; Schottky gate field effect transistors; bipolar MMIC; environmental stress screening; failure analysis; field effect MMIC; gallium arsenide; high electron mobility transistors; integrated circuit reliability; military standards; naval engineering; semiconductor device reliability; semiconductor diodes; GaAs; GaAs-based components; HBT MMIC; MESFET; MESFET MMIC; MIL-HDBK-179; Microcircuit Acquisition Handbook; Microelectronics Component Engineering Branch; Naval Surface Warfare Center; Navy Electronic Equipment; Navy parts derating requirements; PHEMT; PHEMT MMIC; PIN diodes; Schottky diodes; TE000-AB-GTP-010; application manual; environmental categories; failure mechanisms; performance specifications; qualified manufacturers listing; varactor diodes; Cranes; Failure analysis; Field effect MMICs; Gallium arsenide; Integrated circuit noise; Low-noise amplifiers; MESFETs; Manuals; Microwave amplifiers; Temperature distribution;
Conference_Titel :
GaAs Reliability Workshop, 1998. Proceedings
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7908-0065-9
DOI :
10.1109/GAASRW.1998.768029