• DocumentCode
    2840113
  • Title

    Scaling of GeOI NFET in sub-50nm regime using a Monte-Carlo method

  • Author

    Barraud, S. ; Clavelier, L.

  • Author_Institution
    CEA-DRT/LETI, Grenoble, France
  • fYear
    2005
  • fDate
    3-6 Oct. 2005
  • Firstpage
    108
  • Lastpage
    109
  • Abstract
    Electrical properties in germanium and performances of GeOI devices have been studied using MC simulations. We have shown an ion improvement increasing when the channel length is shrinked that is not the case in strained-Si based NFET. The results clearly demonstrate that the germanium may be a promising material for the future CMOS technology.
  • Keywords
    MOSFET; Monte Carlo methods; electric properties; elemental semiconductors; germanium; CMOS technology; Ge; GeOI NFET; MC simulations; Monte-Carlo method; channel length; electrical properties; germanium on insulator; Ballistic transport; CMOS technology; Conductivity; Electrons; Fabrication; Germanium; High-K gate dielectrics; Lattices; MOSFETs; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2005. Proceedings. 2005 IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-9212-4
  • Type

    conf

  • DOI
    10.1109/SOI.2005.1563554
  • Filename
    1563554
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2840113