DocumentCode :
2840130
Title :
Process reliability qualification experiences during a fab relocation
Author :
Roesch, William J. ; Bumgarner, Susan ; Monaghan, Lita O. ; Rubalcava, Tony ; Riley, Denise ; Cruse, Donna ; Cartwright, Jim
Author_Institution :
TriQuint Semicond. Inc., Beaverton, OR, USA
fYear :
1998
fDate :
1998
Firstpage :
19
Lastpage :
25
Abstract :
The intent of this work is to provide information on the methodology, implementation, and results of reliability assessments enacted as part of new facility qualification. Three major processes were qualified using millions of element and thousands of lead product results. A qualification methodology is described which involves use of elements and products. Experience has shown that elemental tests are beneficial in precisely identifying failure mechanisms and the associated process capability. It is also shown that tests on wafers can provide similar results to packaged products, except that they can yield results in much shorter times. The timeline was particularly important for this fab move because of the compressed time schedule. The success of this work indicates that a methodology involving elements and circuits through similar stresses is appropriate to evaluate integrated circuit reliability for qualification testing and for continuous process capability monitoring
Keywords :
III-V semiconductors; environmental testing; failure analysis; gallium arsenide; integrated circuit manufacture; integrated circuit reliability; integrated circuit testing; process monitoring; GaAs; GaAs IC manufacturing; QEDA process; continuous process capability monitoring; elemental tests; fab relocation; facility qualification; failure mechanisms; integrated circuit reliability; lead product results; process reliability qualification; qualification methodology; qualification testing; reliability assessments; stresses; wafer tests; Circuit testing; Failure analysis; Integrated circuit packaging; Integrated circuit reliability; Integrated circuit testing; Integrated circuit yield; Lead; Monitoring; Qualifications; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GaAs Reliability Workshop, 1998. Proceedings
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7908-0065-9
Type :
conf
DOI :
10.1109/GAASRW.1998.768031
Filename :
768031
Link To Document :
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