Title :
A new dose rate model for SOI MOSFETs and its implementation in SPICE
Author :
Liu, H.Y. ; Golke, K.W. ; Liu, S.T.
Author_Institution :
Honeywell Defense & Space Electron. Syst., Plymouth, MN, USA
Abstract :
A new SPICE based dose rate model is proposed for SOI MOSFETs, which accounts for collections of excess carriers by both source/body and drain/body junctions. It is also identified that the parasitic bipolar transistor does not play a significant role within the range of dose rate of interest. An implementation method for circuit level simulation is described. The validity of this model has been verified by test results.
Keywords :
MOSFET; SPICE; semiconductor device models; semiconductor junctions; silicon-on-insulator; SOI MOSFET; SPICE; circuit level simulation; dose rate model; drain-body junctions; excess carriers; silicon-on-insulator; source-body junctions; Bipolar transistors; Charge carrier processes; Circuits; Diodes; Equations; MOS devices; MOSFETs; P-n junctions; Photoconductivity; SPICE;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563556
