Title :
Effects of drain current kinks and negative gate resistances on the performance of HFET MMIC power amplifiers
Author :
Wei, Ce-Jun ; Hwang, James C M
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Abstract :
Using novel characterization techniques, frequency-sensitive gain/phase discontinuities of multi-stage MMIC power amplifiers were correlated with HFET drain current kinks and negative gate resistances. The correlation was explained in terms of hole-trapping and self-biasing mechanisms. A remedy involving bias-stabilization diodes was experimentally verified. Other possible remedies are also discussed
Keywords :
III-V semiconductors; MMIC power amplifiers; circuit stability; field effect MMIC; gallium arsenide; hole traps; integrated circuit modelling; negative resistance; 8.3 GHz; GaAs HFET MMIC power amplifiers; GaAs-AlGaAs; bias-stabilization diodes; characterization techniques; drain current kinks; frequency-sensitive gain/phase discontinuities; hole-trapping; multi-stage MMIC power amplifiers; negative gate resistances; physical models; pulsed I-V characteristics; self-biasing mechanisms; Avalanche breakdown; Electronic mail; Frequency; Gallium arsenide; HEMTs; MMICs; MODFETs; Performance gain; Power amplifiers; Voltage;
Conference_Titel :
GaAs Reliability Workshop, 1998. Proceedings
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7908-0065-9
DOI :
10.1109/GAASRW.1998.768033
