DocumentCode :
2840205
Title :
Layer-transfer process modifications for fabricating hybrid crystal orientation engineered substrates
Author :
Sullivan, Jim ; Kirk, Harry R. ; Kang, Sien ; Ong, Philip J. ; Henley, Francois J.
Author_Institution :
Silicon Genesis Corp., San Jose, CA, USA
fYear :
2005
fDate :
3-6 Oct. 2005
Firstpage :
121
Lastpage :
122
Abstract :
Successful integration of hybrid-orientation substrates into high-volume production requires a layer-transfer process to prepare the substrates. Modifications of SiGen´s NanoCleave™ layer-transfer process were tested for compatibility to cleave and smooth [110] films, produce multi-stack composites and prepare direct bonded film structures. The technology has the promise to be a viable manufacturing process for strained and unstrained hybrid-orientation substrates used for deep submicron mobility enhancement.
Keywords :
carrier mobility; crystal orientation; manufacturing processes; nanotechnology; substrates; wafer bonding; cleave films; deep submicron mobility enhancement; direct bonded film structures; hybrid crystal orientation engineered substrates; layer-transfer process modifications; manufacturing process; multistack composites; smooth films; strained hybrid-orientation substrates; unstrained hybrid-orientation substrates; Bonding; Kirk field collapse effect; Laminates; MOS devices; Semiconductor films; Silicon; Smoothing methods; Space technology; Substrates; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-9212-4
Type :
conf
DOI :
10.1109/SOI.2005.1563560
Filename :
1563560
Link To Document :
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