Title :
In-situ picosecond measurements of InP and GaAs ICs utilizing photoconductive sampling probes
Author :
Weatherford, T.R. ; David, G. ; Crites, M. ; Whitaker, J.F. ; Jobe, K. ; Ledbetter, E.J. ; Meyer, S. ; Bustamante, M. ; Thomas, S., III ; Elliott, K.
Author_Institution :
Naval Postgraduate Sch., Monterey, CA, USA
Abstract :
The accuracy of device and circuit models is critical for successful CAD of gigahertz circuits. Validating these models becomes exceedingly difficult as circuit clock rates surpass testing capabilities. This work presents a technique which can provide picosecond and microvolt resolution in measuring voltage signals internal to an integrated circuit. A photoconductive probe developed at the University of Michigan has been utilized to noninvasively measure voltage potentials internal to InP and GaAs digital circuits operating in excess of 17 GHz. Measurement results are presented for two circuits: an npn InAlAs/InGaAs HBT technology configured in an ECL divide by four circuit, and E/D GaAs MESFETs configured in a matrix delay chain for measuring propagation delays
Keywords :
III-V semiconductors; MESFET integrated circuits; bipolar digital integrated circuits; delay estimation; dividing circuits; emitter-coupled logic; field effect digital integrated circuits; gallium arsenide; high-speed integrated circuits; high-speed techniques; indium compounds; integrated circuit measurement; photoconducting devices; signal sampling; voltage measurement; 17 GHz; E/D GaAs MESFETs; ECL divide by four circuit; GaAs; GaAs digital circuits; InAlAs-InGaAs; InP; InP digital circuits; circuit clock rates; circuit model validation; device model validation; gigahertz circuit CAD; in-situ picosecond measurements; matrix delay chain; microvolt resolution; npn InAlAs/InGaAs HBT technology; photoconductive sampling probes; propagation delays; voltage potential measurement; voltage signal measurement; Circuit testing; Clocks; Gallium arsenide; Indium phosphide; Integrated circuit measurements; Photoconducting devices; Probes; Propagation delay; Signal resolution; Voltage measurement;
Conference_Titel :
GaAs Reliability Workshop, 1998. Proceedings
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7908-0065-9
DOI :
10.1109/GAASRW.1998.768036
