• DocumentCode
    2840245
  • Title

    The effect of integration of strontium-bismuth-tantalate capacitors onto SOI wafers

  • Author

    Joshi, Vikram ; Ohno, Morifumo ; Ida, Jiro ; Nagatomo, Yoshiki ; Strauss, Karl

  • Author_Institution
    Symetrix Semicond. Corp., Palo Alto, CA, USA
  • fYear
    2005
  • fDate
    3-6 Oct. 2005
  • Firstpage
    128
  • Lastpage
    129
  • Abstract
    We report for the first time the successful integration of strontium-bismuth-tantalate ferroelectric capacitors on an SOI substrate. We have verified that the unique processing requirements of SBT capacitors do not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.
  • Keywords
    bismuth compounds; ferroelectric capacitors; silicon-on-insulator; strontium compounds; tantalum compounds; FD-SOI transistors; SOI substrate; SrBi2Ta2O9-Si; ferroelectric capacitors; strontium-bismuth-tantalate capacitors; Capacitors; Ferroelectric materials; Ionizing radiation; Laboratories; NASA; Nonvolatile memory; Propulsion; Strontium; Substrates; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2005. Proceedings. 2005 IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-9212-4
  • Type

    conf

  • DOI
    10.1109/SOI.2005.1563563
  • Filename
    1563563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2840245