Title :
Thermal impedance computations using realistic power dissipation profiles
Author_Institution :
Gateway Modeling Inc., Minneapolis, MN, USA
Abstract :
This paper describes the PETS electrothermal simulator that is coupled to G-PISCES-2B, a drift-diffusion Poisson-current-continuity equation solver. The intention is to make users in the GaAs REL community aware of some of the consequences of the shapes of the power dissipation profiles in MESFETs, HEMTs, and HBTs. We present obligatory comparisons between measured and modeled HEMT and HBT thermal impedances, but we focus on what we can learn about thermal designs from the simulator
Keywords :
Schottky gate field effect transistors; flip-chip devices; heterojunction bipolar transistors; high electron mobility transistors; semiconductor device models; semiconductor device packaging; thermal resistance; G-PISCES-2B; GaAs; HBTs; HEMTs; MESFETs; PETS electrothermal simulator; drift-diffusion Poisson-current-continuity equation solver; flip chip designs; realistic power dissipation profiles; thermal designs; thermal impedance computations; thermal shunts; Computational modeling; Electrothermal effects; Gallium arsenide; HEMTs; Impedance; MODFETs; Poisson equations; Positron emission tomography; Power dissipation; Shape;
Conference_Titel :
GaAs Reliability Workshop, 1998. Proceedings
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7908-0065-9
DOI :
10.1109/GAASRW.1998.768039
