Thermal impedance computations using realistic power dissipation profiles

Author

Anholt, Robert

Author_Institution

Gateway Modeling Inc., Minneapolis, MN, USA

fYear

1998

fDate

1998

Firstpage

69

Lastpage

73

Abstract

This paper describes the PETS electrothermal simulator that is coupled to G-PISCES-2B, a drift-diffusion Poisson-current-continuity equation solver. The intention is to make users in the GaAs REL community aware of some of the consequences of the shapes of the power dissipation profiles in MESFETs, HEMTs, and HBTs. We present obligatory comparisons between measured and modeled HEMT and HBT thermal impedances, but we focus on what we can learn about thermal designs from the simulator

Keywords

Schottky gate field effect transistors; flip-chip devices; heterojunction bipolar transistors; high electron mobility transistors; semiconductor device models; semiconductor device packaging; thermal resistance; G-PISCES-2B; GaAs; HBTs; HEMTs; MESFETs; PETS electrothermal simulator; drift-diffusion Poisson-current-continuity equation solver; flip chip designs; realistic power dissipation profiles; thermal designs; thermal impedance computations; thermal shunts; Computational modeling; Electrothermal effects; Gallium arsenide; HEMTs; Impedance; MODFETs; Poisson equations; Positron emission tomography; Power dissipation; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1998. Proceedings

Conference_Location

Atlanta, GA

Print_ISBN

0-7908-0065-9

Type

conf

DOI

10.1109/GAASRW.1998.768039

Filename

768039