Title :
200mm germanium-on-insulator (GeOI) by Smart Cut™ technology and recent GeOI pMOSFETs achievements
Author :
Akatsu, T. ; Deguet, C. ; Sanchez, L. ; Richtarch, C. ; Allibert, F. ; Letertre, F. ; Mazure, C. ; Kernevez, N. ; Clavelier, L. ; Le Royer, C. ; Hartmann, J.-M. ; Loup, V. ; Meuris, M. ; De Jaeger, B. ; Raskin, G.
Author_Institution :
Soitec S.A., Parc Technologiques des Fontaines, Bernin, France
Abstract :
We present our recent achievements on 200mm GeOI formation from bulk Ge wafers and the resulting device characteristics. Pseudo-MOS measurements were done at Soitec, and Ge MOSFET fabrication was done at LETI and IMEC from epitaxial and bulk Ge starting materials, respectively.
Keywords :
MOSFET; elemental semiconductors; germanium; semiconductor device measurement; 200 mm; Ge; Ge MOSFET fabrication; Smart Cut technology; device characteristics; germanium-on-insulator; pMOSFETs achievements; pseudo-MOS measurements; Dielectrics; Electrical resistance measurement; Hafnium oxide; Kelvin; MOSFET circuits; Passivation; Plasma temperature; Surface treatment; Tin; Voltage;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563565
