Title :
Reliability of Al/Ti gate AlGaAs/GaAs power HFETs in hydrogen gas
Author :
Menozzi, R. ; Gaddi, R. ; Nava, F. ; Lanzieri, C. ; Canali, C.
Author_Institution :
Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy
Abstract :
Here we approach for the first time the problem of hydrogen poisoning for Al/Ti-gate (Pt-free) AlGaAs/GaAs power HFETs. Throughout the stress, we have monitored the changes of IDSS, gm , threshold voltage (VT) and gate barrier height (Φ B) The separate measurement of the shifts of VT and ΦB allows us to gain new insight of the mechanisms underlying the device changes during hydrogen exposure. Moreover, by measuring the source-gate and drain-gate breakdown voltages, as well as the gm frequency dispersion, we can speculate on the effect of hydrogenation on the access regions on the gate sides
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hydrogenation; life testing; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; 180 C; Al-Ti; Al/Ti gate AlGaAs/GaAs power HFETs; AlGaAs-GaAs; H2 gas; accelerated stress tests; access regions; double-recessed process; drain-gate breakdown voltage; frequency dispersion; gate barrier height; hydrogen exposure; hydrogen poisoning; hydrogenation; reliability; source-gate breakdown voltage; threshold voltage; Decision support systems; Frequency measurement; Gain measurement; Gallium arsenide; HEMTs; Hydrogen; MODFETs; Monitoring; Stress measurement; Threshold voltage;
Conference_Titel :
GaAs Reliability Workshop, 1998. Proceedings
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7908-0065-9
DOI :
10.1109/GAASRW.1998.768040
