Ultra-thin strained Si on insulator substrate using laser annealing

Author

Mishima, Yasuyoshi ; Mimura, Atsushi ; Fukuda, Masatoshi ; Ochimizu, Hirosato

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2005

fDate

3-6 Oct. 2005

Firstpage

141

Lastpage

143

Abstract

We describe a low-temperature process for fabricating strained silicon on insulator (SOI) substrates using excimer laser annealing technology. We used an excimer laser to relax the SiGe layer on the SOI substrate. We can fabricate ultra-thin strained SOI by removing the relaxed SiGe layer on the SOI after laser annealing. Strains are investigated using ultraviolet (UV)-Raman spectroscopy and transmission electron microscopy (TEM).

Keywords

Ge-Si alloys; Raman spectroscopy; excimer lasers; laser beam annealing; low-temperature techniques; silicon-on-insulator; substrates; transmission electron microscopy; ultraviolet spectroscopy; SiGe; excimer laser annealing technology; low-temperature process; transmission electron microscopy; ultra-thin strained silicon on insulator substrate; ultraviolet-Raman spectroscopy; Annealing; Chemical lasers; Germanium silicon alloys; Insulation; Laser beams; MOSFETs; Optical pulses; Silicon germanium; Silicon on insulator technology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2005. Proceedings. 2005 IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-9212-4

Type

conf

DOI

10.1109/SOI.2005.1563567

Filename

1563567

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2840296