Utilizing hydrogen exposure to design reliable gettered packages

Author

Adams, S. ; Shumway, L. ; Whitney, J. ; Wallace, R. ; Chao, PC ; Hu, W.

Author_Institution

Sanders Associates Inc., Nashua, NH, USA

fYear

1998

fDate

1998

Firstpage

82

Lastpage

86

Abstract

Hydrogen degradation of GaAs devices is usually characterized as a mean-time-to-failure accelerated by temperature and hydrogen pressure. In gettered packages the hydrogen pressure can become negligible during a mission, leading to an undefined MTTF. A new metric, hydrogen exposure, E (atm-hr), with units of atmosphere-hours is introduced. Exposure is the product of hydrogen pressure and time, or more exactly, the time integral of the hydrogen partial pressure. Device reliability can then be unambiguously described by hydrogen exposure

Keywords

III-V semiconductors; failure analysis; gallium arsenide; getters; hydrogenation; integrated circuit packaging; integrated circuit reliability; semiconductor device packaging; semiconductor device reliability; GaAs; GaAs devices; H₂ exposure; MTTF; device dose; device reliability; getter speed; gettered package reliability; hydrogen degradation; hydrogen exposure; hydrogen partial pressure; hydrogen pressure; mean-time-to-failure; pHEMT; time integral; Chaos; Degradation; Equations; Gallium arsenide; Gettering; Hydrogen; Packaging; Robustness; Steady-state; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1998. Proceedings

Conference_Location

Atlanta, GA

Print_ISBN

0-7908-0065-9

Type

conf

DOI

10.1109/GAASRW.1998.768041

Filename

768041