Title :
Utilizing hydrogen exposure to design reliable gettered packages
Author :
Adams, S. ; Shumway, L. ; Whitney, J. ; Wallace, R. ; Chao, PC ; Hu, W.
Author_Institution :
Sanders Associates Inc., Nashua, NH, USA
Abstract :
Hydrogen degradation of GaAs devices is usually characterized as a mean-time-to-failure accelerated by temperature and hydrogen pressure. In gettered packages the hydrogen pressure can become negligible during a mission, leading to an undefined MTTF. A new metric, hydrogen exposure, E (atm-hr), with units of atmosphere-hours is introduced. Exposure is the product of hydrogen pressure and time, or more exactly, the time integral of the hydrogen partial pressure. Device reliability can then be unambiguously described by hydrogen exposure
Keywords :
III-V semiconductors; failure analysis; gallium arsenide; getters; hydrogenation; integrated circuit packaging; integrated circuit reliability; semiconductor device packaging; semiconductor device reliability; GaAs; GaAs devices; H2 exposure; MTTF; device dose; device reliability; getter speed; gettered package reliability; hydrogen degradation; hydrogen exposure; hydrogen partial pressure; hydrogen pressure; mean-time-to-failure; pHEMT; time integral; Chaos; Degradation; Equations; Gallium arsenide; Gettering; Hydrogen; Packaging; Robustness; Steady-state; Temperature sensors;
Conference_Titel :
GaAs Reliability Workshop, 1998. Proceedings
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7908-0065-9
DOI :
10.1109/GAASRW.1998.768041
