Title :
Development of stacking faults in strained silicon layers
Author :
Bedell, S.W. ; Reznicek, A. ; Yang, B. ; Hovel, H.J. ; Ott, J.A. ; Fogel, K. ; Domenicucci, A.G. ; Sadana, D.K.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Stacking fault (SF) defects have been shown to form in Si layers under tensile strain based in P. M. J. Maree et al. (1987) and S. W. Bedell et al. (2004). In this work, we investigate the development of SF defects in strained silicon layers grown on low-defect SiGe graded buffer layers. Si layers were grown to various thicknesses at different temperatures and the resulting SF densities are measured using a specialized etching technique as presented in S. W. Bedell et al. (2004).
Keywords :
Ge-Si alloys; buffer layers; elemental semiconductors; epitaxial layers; silicon; stacking faults; SiGe-Si; buffer layers; defect development; specialized etching technique; stacking faults; strained silicon layers; tensile strain; Buffer layers; CMOS technology; Density measurement; Etching; Germanium silicon alloys; Silicon germanium; Silicon on insulator technology; Stacking; Substrates; Thickness measurement;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563568
