The effects of epoxy die bonding on the reliability of pseudomorphic GaAs/InGaAs/AlGaAs HEMTs

Author

Lindsay, C.E. ; Conlon, R.F.B. ; Davies, R.A. ; Hall, A.

fYear

1998

fDate

1998

Firstpage

87

Lastpage

91

Abstract

During elevated temperature bias stress of pseudomorphic GaAs/InGaAs/AlGaAs HEMTs long term changes in Ids, gm and breakdown voltage are observed. DC parametric analysis identifies at least two separate mechanisms responsible for the changes in Ids and gm and a further mechanism responsible for changes in breakdown voltage. Unique activation energies are associated with each mechanism. The rate of degradation of all parameters is significantly different for devices assembled with conductive epoxy rather than solder. This is a consequence of both the heat cycle associated with solder bonding and the presence of gaseous contaminants

Keywords

III-V semiconductors; aluminium compounds; environmental testing; gallium arsenide; high electron mobility transistors; indium compounds; lead bonding; life testing; microwave field effect transistors; plastic packaging; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; DC parametric analysis; GaAs-InGaAs-AlGaAs; MMIC application; activation energies; breakdown voltage; elevated temperature bias stress; epoxy die bonding; gaseous contaminants; heat cycle; high temperature endurance tests; polyimide based conductive epoxy; pseudomorphic GaAs/InGaAs/AlGaAs HEMTs; reliability; solder bonding; Assembly; Degradation; Gallium arsenide; HEMTs; Indium gallium arsenide; Intrusion detection; MODFETs; Microassembly; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1998. Proceedings

Conference_Location

Atlanta, GA

Print_ISBN

0-7908-0065-9

Type

conf

DOI

10.1109/GAASRW.1998.768042

Filename

768042