DocumentCode
2840421
Title
A novel self-aligned substrate-diode structure for SOI technologies
Author
Pelella, Mario M ; Burbach, Gert ; Salman, A. ; Chan, Daniel ; Buller, J.
Author_Institution
Adv. Micro Devices, Sunnyvale, CA, USA
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
169
Lastpage
170
Abstract
In this work, we describe novel self-aligned diode and resistor structures and their process integration into an advanced 90nm SOI technology. Their superior device characteristics over conventional device structures built within the SOI film is described.
Keywords
nanotechnology; resistors; semiconductor diodes; silicon-on-insulator; 90 nm; SOI film; self-aligned resistor structures; self-aligned substrate-diode structure; silicon-on-insulator; CMOS process; CMOS technology; Conductivity; MOSFETs; Research and development; Resistors; Semiconductor diodes; Silicon on insulator technology; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563576
Filename
1563576
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