DocumentCode :
2840421
Title :
A novel self-aligned substrate-diode structure for SOI technologies
Author :
Pelella, Mario M ; Burbach, Gert ; Salman, A. ; Chan, Daniel ; Buller, J.
Author_Institution :
Adv. Micro Devices, Sunnyvale, CA, USA
fYear :
2005
fDate :
3-6 Oct. 2005
Firstpage :
169
Lastpage :
170
Abstract :
In this work, we describe novel self-aligned diode and resistor structures and their process integration into an advanced 90nm SOI technology. Their superior device characteristics over conventional device structures built within the SOI film is described.
Keywords :
nanotechnology; resistors; semiconductor diodes; silicon-on-insulator; 90 nm; SOI film; self-aligned resistor structures; self-aligned substrate-diode structure; silicon-on-insulator; CMOS process; CMOS technology; Conductivity; MOSFETs; Research and development; Resistors; Semiconductor diodes; Silicon on insulator technology; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-9212-4
Type :
conf
DOI :
10.1109/SOI.2005.1563576
Filename :
1563576
Link To Document :
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