DocumentCode :
2840438
Title :
A proposal for improving cutoff-frequency breakdown-voltage products of HEMTs
Author :
Tsukurimichi, Hirokazu ; Hashimoto, Shoushin ; Iiyama, Kouichi ; Takamiya, Saburo
Author_Institution :
Fac. of Eng., Kanazawa Univ., Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
663
Lastpage :
666
Abstract :
The breakdown-voltage cutoff-frequency product gives a figure of merit of FETs/HEMTs. This paper studies it from a view point of energy-bandgaps of channel materials, and proposes a bandgap engineered device for improving the product. VB·fT of an InGaAs HEMT can be doubled by introducing a (InGaAs to InP) graded composition zone
Keywords :
III-V semiconductors; energy gap; field effect transistors; gallium arsenide; high electron mobility transistors; indium compounds; HEMT; InGaAs-InP; bandgap engineered device; channel materials; energy-bandgaps; figure of merit; graded composition zone; improving cutoff-frequency breakdown-voltage products; Degradation; HEMTs; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Photonic band gap; Power engineering and energy; Proposals; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712723
Filename :
712723
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2840438
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