High voltage devices added to a 0.13μm high resistivity thin SOI CMOS process for mixed analog-RF circuits

Author

Bon, O. ; Boissonnet, L. ; Gonnard, O. ; Chouteau, S. ; Reynard, B. ; Perrotin, A. ; Raynaud, C.

Author_Institution

STMicroelectronics, Crolles, France

fYear

2005

fDate

3-6 Oct. 2005

Firstpage

171

Lastpage

173

Abstract

We have added to a 0.13μm thin SOI CMOS core process a high competitive SOI NLDEMOS which presents excellent power switch and analog characteristics. Measurements have demonstrated that both drift and BC design rules allow to obtain HV devices (BV > 15V) with a low S.Ron and a low leakage.

Keywords

CMOS integrated circuits; mixed analogue-digital integrated circuits; power semiconductor switches; radiofrequency integrated circuits; silicon-on-insulator; 0.13 micron; SOI NLDEMOS; high voltage devices; lateral drain extension MOS; mixed analog-RF circuits; power switch; thin SOI CMOS process; Breakdown voltage; CMOS process; CMOS technology; Cobalt; Conductivity; Digital circuits; Electric breakdown; Equations; Oxidation; Protection;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2005. Proceedings. 2005 IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-9212-4

Type

conf

DOI

10.1109/SOI.2005.1563577

Filename

1563577

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2840453