• DocumentCode
    2840548
  • Title

    Total dose performance of conventional static and dynamic circuits in a radhard 0.18-μm FDSOI process

  • Author

    Gouker, Pascale ; Tyrrell, B. ; Wyatt, P. ; Austin, E. ; Soares, Andre ; Chen, C.K. ; Burns, Jack

  • Author_Institution
    Massachusetts Inst. of Technol., Lexington, MA, USA
  • fYear
    2005
  • fDate
    3-6 Oct. 2005
  • Firstpage
    185
  • Lastpage
    187
  • Abstract
    Static and dynamic circuits were fabricated in the MIT-LL 0.18-μm FDSOI CMOS process, and exhibited a high tolerance to total dose radiation up to 1 Mrad (SiO2). Circuits were designed using conventional design rules and layout techniques, i.e., they are not radhard-by-design. Hardening was done at the circuit fabrication level using process enhancements. These are the first circuit-level hardness results reported to date for these new enhancements.
  • Keywords
    CMOS integrated circuits; integrated circuit layout; radiation hardening (electronics); silicon-on-insulator; 0.18 micron; FDSOI CMOS process; circuit design; circuit fabrication; dose radiation; dynamic circuits; radhard FDSOI process; radiation hardening; static circuits; Circuits and systems; Electrodes; FETs; Implants; Laboratories; Photonics; Retina; Silicon on insulator technology; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2005. Proceedings. 2005 IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-9212-4
  • Type

    conf

  • DOI
    10.1109/SOI.2005.1563582
  • Filename
    1563582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2840548