Title :
Total dose performance of conventional static and dynamic circuits in a radhard 0.18-μm FDSOI process
Author :
Gouker, Pascale ; Tyrrell, B. ; Wyatt, P. ; Austin, E. ; Soares, Andre ; Chen, C.K. ; Burns, Jack
Author_Institution :
Massachusetts Inst. of Technol., Lexington, MA, USA
Abstract :
Static and dynamic circuits were fabricated in the MIT-LL 0.18-μm FDSOI CMOS process, and exhibited a high tolerance to total dose radiation up to 1 Mrad (SiO2). Circuits were designed using conventional design rules and layout techniques, i.e., they are not radhard-by-design. Hardening was done at the circuit fabrication level using process enhancements. These are the first circuit-level hardness results reported to date for these new enhancements.
Keywords :
CMOS integrated circuits; integrated circuit layout; radiation hardening (electronics); silicon-on-insulator; 0.18 micron; FDSOI CMOS process; circuit design; circuit fabrication; dose radiation; dynamic circuits; radhard FDSOI process; radiation hardening; static circuits; Circuits and systems; Electrodes; FETs; Implants; Laboratories; Photonics; Retina; Silicon on insulator technology; Stimulated emission;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563582
