Title :
150nm SOI embedded SRAMs with very low SER
Author :
Nelson, David K. ; Liu, Harry ; Golke, Keith ; Kohli, Anuj
Author_Institution :
Honeywell DSES Plymouth, MN, USA
Abstract :
A split word line design technique that improves the soft error rate (SER) of high performance 150nm SOI embedded SRAMs is presented along with SER results.
Keywords :
SRAM chips; embedded systems; silicon-on-insulator; 150 nm; embedded SRAM; silicon-on-insulator; soft error rate; split word line design; Charge carrier processes; Delay effects; Error analysis; Neutrons; Protection; Random access memory; Silicon; Single event upset; Testing; Voltage;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563583
