Title :
Considerations for single event effects in non-planar multi-gate SOI FETs
Author :
Alles, M.L. ; Ball, D.R. ; Massengill, L.W. ; Schrimpf, R.D. ; Warren, K.M. ; Weller, R.A.
Author_Institution :
Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Reductions in supply voltage and device dimensions, and increased transistor circuits in advanced circuits, make single event effects increasingly relevant. Non-planar multiple-gate FETs (MugFETs) are under consideration for ≤ 45 nm technology generations. In this work, we examine issues for SEE in advanced MugFETs using energy deposition and device simulations.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; MugFET; device simulations; energy deposition; nonplanar multigate SOI FET; silicon-on-insulator; single event effects; supply voltage; transistor circuits; Circuits; Computational modeling; Discrete event simulation; Doping; FETs; FinFETs; Silicon; Space technology; Transistors; Voltage;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563584
