DocumentCode
2840600
Title
Subterranean photonics using SIMOX 3-D sculpting for optoelectronic integration in silicon-on-insulator
Author
Indukuri, T. ; Koonath, P. ; Jalali, B.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
194
Lastpage
195
Abstract
Three-dimensional optoelectronic integration can be achieved in SOI wafers using the process of SIMOX 3D sculpting. Micro-resonators, with unloaded Q of 8000 and extinction ratio >20 dB, were fabricated in a buried silicon layer and MOS transistor structures were fabricated on the surface silicon layer using a patterned SIMOX process.
Keywords
MOSFET; SIMOX; buried layers; integrated optoelectronics; micromechanical resonators; MOS transistor structures; SIMOX 3D sculpting; SOI wafers; buried silicon layer; microresonators; optoelectronic integration; patterned SIMOX process; silicon-on-insulator; subterranean photonics; surface silicon layer; Extinction ratio; Optical device fabrication; Optical devices; Optical fiber polarization; Optical resonators; Optical surface waves; Optical waveguides; Photonics; Q factor; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563585
Filename
1563585
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