DocumentCode
2840662
Title
A novel nonvolatile memory cell for programmable logic
Author
Lin, H. ; Tiwari, S.
Author_Institution
Cornell Univ., Ithaca, NY, USA
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
208
Lastpage
210
Abstract
A novel, simple and bipolar-injection based nonvolatile field-effect memory cell is demonstrated in silicon-on-insulator CMOS technology. Programming time down to 8 ns are achieved together with erase times of a milli-second. The characteristics, compactness and compatibility with CMOS processes suggest suitability of the structure for embedded programmable and reprogrammable applications, and extensible to 3D applications. This extended abstract summarizes the technology and experimental characteristics of the device.
Keywords
CMOS integrated circuits; field effect memory circuits; programmable logic devices; random-access storage; silicon-on-insulator; CMOS technology; bipolar-injection; field-effect memory cell; nonvolatile memory cell; programmable logic; silicon-on-insulator; CMOS logic circuits; CMOS process; CMOS technology; Charge carrier processes; Logic devices; Logic programming; Nonvolatile memory; Programmable logic arrays; Programmable logic devices; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563590
Filename
1563590
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