Low-voltage, high-speed AlSb/InAs HEMTs

Author

Boos, J.B. ; Kruppa, W. ; Park, D. ; Bennett, B.R. ; Bass, R. ; Yang, M.J. ; Shanabrook, B.V.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1998

fDate

11-15 May 1998

Firstpage

671

Lastpage

674

Abstract

We report on the improved low-voltage, high-speed performance of AlSb/InAs HEMTs obtained using variations in doping method and layer design. Unintentionally-doped HEMTs with a 0.6 μm gate length have a transconductance of 1 S/mm at V_DS=0.4 V. After removal of the gate bonding pad capacitance from an equivalent circuit, an f_TL_g product of 38 GHz-μm is obtained at V_DS=0.4 V. 0.5 μm gate-length HEMTs that have Si doping in a very thin (9 Å) InAs layer located in the upper AlSb barrier exhibit high drain current density and an f_T of 45 GHz at V _DS=0.4 V. 0.1 μm gate-length HEMTs that use an As-soak doping method exhibit an f_T of 230 GHz at V_DS=0.45 V (after correction for the bonding pad capacitance), the highest value achieved thus far in this material system

Keywords

III-V semiconductors; aluminium compounds; current density; high electron mobility transistors; indium compounds; semiconductor doping; 0.1 mum; 0.4 V; 0.45 V; 0.5 mum; 0.6 mum; 230 GHz; 9 A; AlSb-InAs; As-soak doping method; doping method; equivalent circuit; gate bonding pad capacitance; layer design; low-voltage high-speed AlSb/InAs HEMTs; transconductance; Bonding; Capacitance; Design methodology; Doping; Gallium arsenide; HEMTs; Indium compounds; Laboratories; MODFETs; Sheet materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712727

Filename

712727