Title :
Resistivity, adhesive strength, and residual stress measurements of thin film metallizations on single crystal quartz
Author :
Vianco, P.T. ; Conley, W.R. ; Panitz, J.K.G.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
A study of resistivity, adhesive strength, and residual stress measurements which were made on 450 Å Cr/1800 Å Au and 450 Å Mo/1800 Å Au thin films deposited on optically polished, z-plate single crystal quartz surfaces is discussed. The films were analyzed after deposition and following annealing at 380°C or 450°C for 30 min in either air or vacuum. The resistivity of the Cr/Au film increased by 1090% and 1780% after vacuum annealing at 390°C and 450°C, respectively. These increases were reduced when 1000 Å of Ni or Mo were introduced as barrier layers between the Cr and Au to prevent interdiffusion of the two layers. The resistivity of the Mo/Au films remained unchanged after all annealing exposures. The Cr/Au, Cr/Mo/Au, and Cr/Ni/Au films had adhesion strengths of 41 to 70 MPa in both the as-deposited and annealed conditions. The adhesive strength of the Mo/Au metallization was 23 to 31 MPa except after the 450°C air anneal, where the value dropped to zero. The residual stress of the as-deposited Cr/Au films was 170 MPa (tensile) but became compressive at -120 to -250 MPa after annealing. The Mo/Au metallization was deposited with a zero stress value that also became compressive at -140 to -180 MPa
Keywords :
chromium; crystal resonators; gold; metallic thin films; metallisation; molybdenum; nickel; quartz; 30 min; 380 C; 450 C; 450 to 1800 A; Cr-Au-SiO2; Cr-Mo-Au-SiO2; Cr-Ni-Au-SiO2; SiO2 crystal; adhesive strength; air anneal; barrier layers; diffusion barriers; residual stress measurements; resistivity; single crystal quartz; thin film metallizations; vacuum annealing; z-plate single crystal quartz surfaces; Adhesive strength; Annealing; Chromium; Conductivity; Gold; Metallization; Optical films; Residual stresses; Sputtering; Stress measurement;
Conference_Titel :
Frequency Control, 1990., Proceedings of the 44th Annual Symposium on
Conference_Location :
Baltimore, MD
DOI :
10.1109/FREQ.1990.177499