Plasma etching of monocrystal quartz

Author

Spassov, L. ; Yossifov, E. ; Yankov, D. ; Poll, H.-U. ; Schreiter, S.

Author_Institution

Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria

fYear

1990

fDate

23-25 May 1990

Firstpage

238

Lastpage

245

Abstract

The influence of different plasma parameters on the etching rate and the surface profile of monocrystal quartz was studied. Quartz wafers were etched with a high rate (over 0.65 μm/min) as a result of which thin quartz membranes were formed. On such membranes aluminum electrodes were deposited and resonance systems at 42.950 MHz were obtained. Among other results it is found that the parameters of the plasma process and the construction of the masks ought to be optimized in view of manufacturing membranes whose surface characteristics and plane-parallelism are similar to those of the initial wafers

Keywords

crystal resonators; quartz; sputter etching; 42.95 MHz; Al-SiO₂; SiO₂ crystal; etch rate; etching rate; manufacturing membranes; monocrystal quartz; plane-parallelism; plasma parameters; plasma process; resonance systems; surface characteristics; surface profile; thin quartz membranes; Biomembranes; Electrodes; Plasma applications; Plasma density; Plasma devices; Production; Rough surfaces; Solid state circuits; Surface roughness; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control, 1990., Proceedings of the 44th Annual Symposium on

Conference_Location

Baltimore, MD

Type

conf

DOI

10.1109/FREQ.1990.177503

Filename

177503