Title :
Proposal of novel InGaAsP/InP multi-mode interference photonic switches
Author :
Nagai, Shuuichi ; Kogure, Norihito ; Morishima, Goh ; Utaka, Katuyuki
Author_Institution :
Waseda Univ., Tokyo, Japan
Abstract :
We propose novel InGaAsP/InP semiconductor photonic switches using multi-mode interference (MIPS). Switching functions are controlled by changing the refractive indices of the index-modulated regions which are located at the center of the multi-mode waveguide. It is predicted from the calculations by FD-TD (finite difference time domain) method that these devices can operate in various kinds of output schemes, with device sizes of about 8 μm wide and 540 μm long. The characteristics can be improved by optimizing cladding index and/or index-modulated region´s width. We fabricated the InGaAsP/InP MIPS with partial current injection regions, and preliminary transmission properties with no index change were observed
Keywords :
III-V semiconductors; electro-optical switches; finite difference time-domain analysis; gallium arsenide; gallium compounds; indium compounds; light interference; optical waveguides; photonic switching systems; refractive index; semiconductor switches; 540 mum; 8 mum; InGaAsP-InP; cladding index; finite difference time domain method; index-modulated regions; multi-mode interference photonic switches; multi-mode waveguide; partial current injection regions; refractive indices; semiconductor photonic switches; switching functions; Indium phosphide; Interference; Optical refraction; Optical waveguides; Photonic integrated circuits; Proposals; Semiconductor waveguides; Switches; Transmission line matrix methods; Wavelength division multiplexing;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712733
