Proposal of novel InGaAsP/InP multi-mode interference photonic switches

Author

Nagai, Shuuichi ; Kogure, Norihito ; Morishima, Goh ; Utaka, Katuyuki

Author_Institution

Waseda Univ., Tokyo, Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

691

Lastpage

694

Abstract

We propose novel InGaAsP/InP semiconductor photonic switches using multi-mode interference (MIPS). Switching functions are controlled by changing the refractive indices of the index-modulated regions which are located at the center of the multi-mode waveguide. It is predicted from the calculations by FD-TD (finite difference time domain) method that these devices can operate in various kinds of output schemes, with device sizes of about 8 μm wide and 540 μm long. The characteristics can be improved by optimizing cladding index and/or index-modulated region´s width. We fabricated the InGaAsP/InP MIPS with partial current injection regions, and preliminary transmission properties with no index change were observed

Keywords

III-V semiconductors; electro-optical switches; finite difference time-domain analysis; gallium arsenide; gallium compounds; indium compounds; light interference; optical waveguides; photonic switching systems; refractive index; semiconductor switches; 540 mum; 8 mum; InGaAsP-InP; cladding index; finite difference time domain method; index-modulated regions; multi-mode interference photonic switches; multi-mode waveguide; partial current injection regions; refractive indices; semiconductor photonic switches; switching functions; Indium phosphide; Interference; Optical refraction; Optical waveguides; Photonic integrated circuits; Proposals; Semiconductor waveguides; Switches; Transmission line matrix methods; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712733

Filename

712733