Title :
A surface-normal asymmetric Fabry-Perot modulator at 1.3 μm using the Wannier-Stark effect of an InP/InGaAsP superlattice
Author :
Tadanaga, Osamu ; Kagawa, Toshiaki ; Ito, Yoshio ; Amano, Chikara ; Kurokawa, Takashi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
This report describes a 1.3-μm surface-normal asymmetric Fabry-Perot modulator using the Wannier-Stark effect of an InP/InGaAsP superlattice. The extinction ratio of 11.6 dB is achieved at 14 V. The insertion loss is 9.9 dB. This is the first time an extinction ratio of over 10 dB has been obtained in surface-normal optical modulators operating at 1.3 μm
Keywords :
Fabry-Perot interferometers; III-V semiconductors; Stark effect; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; optical losses; semiconductor epitaxial layers; semiconductor superlattices; 1.3 mum; 14 V; 9.9 dB; InP-InGaAsP; Wannier-Stark effect; extinction ratio; insertion loss; superlattice; surface-normal asymmetric Fabry-Perot modulator; Absorption; Extinction ratio; Fabry-Perot; Gold; Indium phosphide; Mirrors; Optical modulation; Optical surface waves; Reflectivity; Superlattices;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712734
