71 mV/dec of sub-threshold slope in vertical tunnel field-effect transistors with GaAsSb/InGaAs heterostructure

Author

Fujimatsu, Motohiko ; Saito, Hiroshi ; Miyamoto, Yutaka

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

25

Lastpage

28

Abstract

We fabricated a vertical tunnel field-effect transistor (TFET) with a GaAsSb/InGaAs heterojunction using a 5-nm-thick Al₂O₃ dielectric. The 26-nm width of the narrow channel mesa structure was confirmed using citric acid solution. The minimum sub-threshold slope (SS) was 71 mV/dec. On the basis of our simulated and experimental results, the SS was estimated to be 54 mV/dec for an effective oxide thickness (EOT) of 1 nm.

Keywords

III-V semiconductors; alumina; field effect transistors; gallium arsenide; indium compounds; semiconductor heterojunctions; tunnel transistors; Al₂O₃; GaAsSb-InGaAs; GaAsSb-InGaAs heterojunction; GaAsSb-InGaAs heterostructure; alumina dielectric; citric acid solution; effective oxide thickness; minimum subthreshold slope; narrow channel mesa structure width; size 1 nm; size 26 nm; size 5 nm; vertical tunnel field-effect transistors; Aluminum oxide; Etching; Fabrication; Heterojunctions; Indium gallium arsenide; Transistors; Tunneling; Al2O3; GaAsSb; Tunnel FET; sub-threshold slope; type-II heterojunction; vertical transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403309

Filename

6403309