GaAs microwave devices and MMICs development in NEDI

Author

Chen, Xiaojian ; Lin, Jinting

Author_Institution

Nanjing Electron. Devices Inst., China

fYear

1998

fDate

1998

Firstpage

67

Lastpage

70

Abstract

The development of GaAs microwave devices and MMICs in NEDI has been introduced and reviewed. The developed MESFETs, PHEMTs, HFETs and HBTs for low noise and power applications have covered the operation frequency range between L and Ka-band. Homo- and hetero-junction MMICs with the gate-length of 0.5 μm and beyond are designed by the state-of-the-art CAD tools and manufactured from the well equipped 2 inch and 3 inch GaAs processing lines

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; circuit CAD; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; integrated circuit manufacture; microwave bipolar transistors; microwave field effect transistors; 0.5 micron; CAD tools; GaAs; GaAs MMICs; GaAs microwave devices; GaAs processing lines; HBT; HFET; MESFET; NEDI; PHEMT; heterojunction MMICs; homojunction MMICs; low noise applications; low power applications; pseudomorphic HEMT; Computer aided manufacturing; Design automation; Frequency; Gallium arsenide; HEMTs; MESFETs; MMICs; MODFETs; Microwave devices; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4308-5

Type

conf

DOI

10.1109/ICMMT.1998.768226

Filename

768226