Title :
Nonlocal transport effects in hyperabrupt GaAs IMPATT diodes for operation at and beyond 200 GHz
Author :
Liebig, D. ; Schünemann, K.
Author_Institution :
Arbeitsbereich Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Germany
Abstract :
A physical ensemble particle simulation has been applied to investigate the microscopical carrier transport effects occurring in abruptly doped double low-high-low IMPATT-structures. A study of non-stationary and non-local transport effects appearing in an idealized unipolar bulk semiconductor as well as a fully self-consistent simulation of the bipolar transport in the diode is presented to clarify the physical effects which influence device operation. A parameter study shows strong variations of non-locality of impact ionization and velocity overshoot as well as an unexpected significant velocity undershoot as a function of the doping profile
Keywords :
III-V semiconductors; IMPATT diodes; doping profiles; gallium arsenide; impact ionisation; millimetre wave diodes; semiconductor device models; 200 GHz; GaAs; abruptly doped double low-high-low IMPATT structures; bipolar transport; carrier transport effects; doping profile; high electric fields; hyperabrupt GaAs IMPATT diodes; idealized unipolar bulk semiconductor; impact ionization; nonlocal transport effects; nonstationary transport effects; physical ensemble particle simulation; velocity overshoot; velocity undershoot; Charge carrier processes; Diodes; Doping profiles; Effective mass; Electrons; Feedback; Frequency; Gallium arsenide; Impact ionization; Microscopy;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768227
