Nonlocal transport effects in hyperabrupt GaAs IMPATT diodes for operation at and beyond 200 GHz

Author

Liebig, D. ; Schünemann, K.

Author_Institution

Arbeitsbereich Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Germany

fYear

1998

fDate

1998

Firstpage

71

Lastpage

74

Abstract

A physical ensemble particle simulation has been applied to investigate the microscopical carrier transport effects occurring in abruptly doped double low-high-low IMPATT-structures. A study of non-stationary and non-local transport effects appearing in an idealized unipolar bulk semiconductor as well as a fully self-consistent simulation of the bipolar transport in the diode is presented to clarify the physical effects which influence device operation. A parameter study shows strong variations of non-locality of impact ionization and velocity overshoot as well as an unexpected significant velocity undershoot as a function of the doping profile

Keywords

III-V semiconductors; IMPATT diodes; doping profiles; gallium arsenide; impact ionisation; millimetre wave diodes; semiconductor device models; 200 GHz; GaAs; abruptly doped double low-high-low IMPATT structures; bipolar transport; carrier transport effects; doping profile; high electric fields; hyperabrupt GaAs IMPATT diodes; idealized unipolar bulk semiconductor; impact ionization; nonlocal transport effects; nonstationary transport effects; physical ensemble particle simulation; velocity overshoot; velocity undershoot; Charge carrier processes; Diodes; Doping profiles; Effective mass; Electrons; Feedback; Frequency; Gallium arsenide; Impact ionization; Microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4308-5

Type

conf

DOI

10.1109/ICMMT.1998.768227

Filename

768227