Fabrication and DC characterization of InAs/AlSb self-switching diodes

Author

Westlund, A. ; Moschetti, Giuseppe ; Zhao, Hang ; Nilsson, Per-Ake ; Grahn, Jan

Author_Institution

Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

65

Lastpage

68

Abstract

Fabrication and DC measurements of an InAs/AlSb self-switching diode (SSD), aimed for THz detection, is presented. An SSD with a channel width of 160 nm and a trench width of 240 nm was designed and fabricated in a process using an in situ passivation procedure of the oxidation-sensitive trench. Rectifying behavior was observed in the I-V characteristics. The device performance was relatively stable over a period of three months.

Keywords

III-V semiconductors; aluminium compounds; indium compounds; passivation; semiconductor device manufacture; semiconductor diodes; DC measurements; I-V characteristics; THz detection; channel width; in situ passivation procedure; oxidation-sensitive trench; rectifying behavior; self-switching diodes; trench width; Fabrication; Gallium arsenide; Oxidation; Resistance; Silicon; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403320

Filename

6403320