Relation between two-dimensional electron gas density and the size of material structure of planar doped HEMT and PHEMT

Author

Bai, Li Xiao ; Ying, Li Wei

Author_Institution

Nat. Key Lab. of ASIC, Hebei Semicond. Res. Inst., Shijiazhuang, China

fYear

1998

fDate

1998

Firstpage

80

Lastpage

83

Abstract

The relation has been described between the structure sizes of material at the spacer layer, δ-modulation doped layer, barrier depleted layer and 2DEG density at the heterojunction interface layer, the pinch-off voltage, and the channel current of the HEMT and PHEMT. This is very useful in the design process of materials and devices in the field of microwaves and millimeter waves

Keywords

Poisson equation; doping profiles; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; two-dimensional electron gas; δ-modulation doped layer; 2D electron gas density; 2DEG density; barrier depleted layer; channel current; delta modulation doping; heterojunction interface layer; material structure size; microwave operation; millimeter wave operation; pinchoff voltage; planar doped HEMT; planar doped PHEMT; pseudomorphic HEMT; spacer layer; two-dimensional electron gas density; Electrons; Epitaxial layers; FETs; HEMTs; Heterojunctions; PHEMTs; Poisson equations; Potential well; Semiconductor materials; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4308-5

Type

conf

DOI

10.1109/ICMMT.1998.768229

Filename

768229